Specifications:
| Designator | type Designator: TGAN25N120ND |
| Type | IGBT + Anti-Parallel Diode |
| Type | Type of IGBT Channel: N |
| Package | Maximum Power Dissipation: 312 W |
| Vce | Maximum Collector-Emitter Voltage: 1200 V |
| Ic | Operating current :25A |
| Vge | Maximum Gate-Emitter Voltage: 20 V |
| Ic | Maximum Collector Current: 50 A @25℃ |
| VCEsat | Collector-Emitter saturation Voltage, typ: 1.9 V @25℃ |
| VGEth | Maximum G-E Threshold Voltag: 7 V |
| Tj | Maximum Junction Temperature: 150 ℃ |
| tr | Rise Time, typ: 65 nS |
| Coes | Output Capacitance, typ: 105 pF |
| Qg | Total Gate Charge, typ: 230 nC |
| Package | TO3PN |
Features:
Item: Original
1200V voltage rating, high-speed switching, low conduction loss, and positive temperature coefficient. Its applications include induction heating and soft switching





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