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IGBT-TGA25N120ND TO-3P(Original)

Original price was: Rs.1,074.95.Current price is: Rs.995.50.

Operating current 25A
Max Collector-Emitter Voltage 1200V
Type of IGBT Channel N
Pins 3
Max Power Dissipation 312W

15 in stock

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Specifications:

Designator type Designator: TGAN25N120ND
Type IGBT + Anti-Parallel Diode
Type Type of IGBT Channel: N
Package Maximum Power Dissipation: 312 W
Vce Maximum Collector-Emitter Voltage: 1200 V
Ic Operating current :25A
Vge Maximum Gate-Emitter Voltage: 20 V
Ic Maximum Collector Current: 50 A @25℃
VCEsat Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
VGEth Maximum G-E Threshold Voltag: 7 V
Tj Maximum Junction Temperature: 150 ℃
tr Rise Time, typ: 65 nS
Coes Output Capacitance, typ: 105 pF
Qg Total Gate Charge, typ: 230 nC
Package TO3PN

Features:

Item: Original

1200V voltage rating, high-speed switching, low conduction loss, and positive temperature coefficient. Its applications include induction heating and soft switching

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